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| CEP21A3/CEB21A3 Nov. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON)=45m @VGS=10V. RDS(ON)=70m @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 D G G S G D S S CEP SERIES TO-220 CEB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 20 60 20 43 0.29 -65 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 4-167 3.5 62.5 C/W C/W CEP21A3/CEB21A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Condition VGS = 0V, ID=250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 12A VGS = 4.5V, ID =15A VDS = 10V, VGS = 10V VDS = 10V, ID = 12A Min Typ Max Unit 30 1 100 0.8 36 55 20 20 364 197 62 2.5 45 70 V A nA V m m A S C 4 ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b PF PF PF VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 15V, ID = 12A VGS = 10V, RGEN =2.5 VDS = 15V,ID = 6A VGS = 10V 12 5 14 14 10 2 3 25 15 30 30 15 ns ns ns ns nC nC nC 4-168 CEP21A3/CEB21A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 12A Min Typ Max Unit 0.9 1.3 V 4 DRAIN-SOURCE DIODE CHARACTERISTICS a Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 VGS=10,9,8,7,6V 25 40 VGS=5V 50 25 C ID, Drain Current (A) 20 15 ID, Drain Current (A) 30 VGS=4V 10 5 20 Tj=125 C 10 -55 C VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 600 Figure 2. Transfer Characteristics 1.80 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 500 1.60 1.40 1.20 1.00 0.80 ID=12A VGS=10V C, Capacitance (pF) 400 300 Ciss Coss 200 100 0 0 5 10 15 20 25 30 Crss 0.60 -50 -25 0 25 50 75 100 125 150 VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 4-169 CEP21A3/CEB21A3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 4 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 50 Figure 6. Breakdown Voltage Variation with Temperature 50 gFS, Transconductance (S) Is, Source-drain current (A) 40 30 20 10 VDS=10V 0 0 5 10 15 20 10 1.0 0.1 0.6 0.8 1.0 1.2 1.4 1.6 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 Figure 8. Body Diode Forward Voltage Variation with Source Current 70 VGS, Gate to Source Voltage (V) ID, Drain Current (A) 8 6 4 2 0 0 VDS=15V ID=6A 20 10 R ( DS ) ON Lim it 1m 10 ms 10 0 s s DC 1 0.5 1 VGS=10V Single Pulse Tc=25 C 10 30 100 3 6 9 12 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 4-170 Figure 10. Maximum Safe Operating Area CEP21A3/CEB21A3 4 V IN D VGS RGEN G 90% VDD t on RL VOUT VOUT 10% 4 toff tr 90% td(on) td(off) 90% 10% tf INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 10 -5 PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 -4 10 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 4-171 |
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